X-ray diffraction from thin epitaxial semiconductor layers and multiple quantum well structures
نویسندگان
چکیده
منابع مشابه
Three-wave X-ray diffraction in distorted epitaxial structures
Three-wave diffraction has been measured for a set of GaN, AlN, AlGaN and ZnO epitaxial layers grown on c-sapphire. A Renninger scan for the primary forbidden 0001 reflection was used. For each of the three-wave combinations, θ-scan curves were measured. The intensity and angular width of both ϕ- and θ-scan three-wave peaks were analyzed. The experimental data were used to determine properties ...
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The analysis of double-crystal x-ray rocking curves of single-crystal layered structures can give valuable information on layer strains, displacement of atoms from normal lattice sites (which reduces the structure factor), crystallographic misorientations, and crystal defects. Both strains and misorientations cause shifts in the Bragg angle. These two effects are readily separated using two or ...
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A general theoretical approach to the description of epitaxial layers with essentially different cell parameters and in-plane relaxation anisotropy has been developed. A covariant description of relaxation in such structures has been introduced. An iteration method for evaluation of these parameters on the basis of the diffraction data set has been worked out together with error analysis and re...
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We propose that the exciton condensate may form in a well-controlled way in appropriately arranged semiconductor quantum well structures. The mean-field theory of Keldysh and Kopaev, exact in both the high density and the low density limits, is solved numerically to illustrate our proposal. The electron-hole pairing gap and the excitation spectrum of the exciton condensate are obtained. The ene...
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ژورنال
عنوان ژورنال: Acta Crystallographica Section A Foundations of Crystallography
سال: 1987
ISSN: 0108-7673
DOI: 10.1107/s010876738708190x